C. Mariappan, E. Prabhu, K. I. Gnanasekar, V. Jayaraman, T. Gnanasekaran
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引用次数: 1
Abstract
In2O3 thin film was fabricated using pulsed laser deposition technique. The structure and morphology of the thin film were characterized by X-ray diffraction and atomic force microscopy respectively. AC impedance of In2O3 thin film gas sensor were investigated at different temperatures (275 – 425 °C) when exposed into clean air and air containing NOx. Significant NOx sensing characteristics of thin film were observed at 325 °C by ac impedance analysis. The resistance and capacitance of indium oxide film were increased in the presence of NOx. The mechanism for the increase of resistance and of capacitance is presented.
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