TCAD Simulation of Dual-Gate p-GaN/AlGaN/GaN HEMT Bidirectional Switch

Abstract

The bidirectional switch has great potential in AC-AC matrix converter and other power electronics areas. In this work, the TCAD simulation of p-GaN/AlGaN/GaN High Electron Mobility Transistor (HEMT)dual-gate bidirectional switch is systematically carried out. The static I-V characteristics and the bidirectional conduction ability are presented to prove the successful establishment of our model. These results are consistent with the trends from previous literature. By changing the separation distance between two gates when the device's total size remains the same, the off-state breakdown voltage is improved to 1571V under gate voltage of 0V. The simulation points out the direction to improve the performance of monolithic GaN bidirectional switches in high voltage applications.