Fabrication of ridge waveguides in LiNbO3

B. Weigand, M. Stolze, F. Rubel, J. L’huillier, A. Lenhard, C. Becher, S. Wolff
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引用次数: 11

Abstract

We have fabricated ridge waveguides in lithium niobate with sidewall roughness of 14 nm (rms) and sidewall angles of more than 71°. The use of thick electroplated metal masks for reactive ion etching (RIE) makes it possible to manufacture ridge structures with several microns in height. For light confinement towards the substrate we investigate direct heterobonding techniques. Due to the expected low transmission losses we envision future applications in the field of quantum optics.
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LiNbO3中脊波导的制备
我们已经在铌酸锂材料中制备了边壁粗糙度为14 nm (rms),边壁角大于71°的脊波导。使用厚电镀金属掩模进行反应离子蚀刻(RIE),可以制造高度为几微米的脊结构。对于衬底的光约束,我们研究了直接杂键技术。由于预期的低传输损耗,我们展望了未来在量子光学领域的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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