Investigation of Bond PAD Crystal Defect for Different Cover Transmission Rate

Abstract

With the advancement of VLSI technology and the continuous development of metal oxide semiconductor field effect transistors (MOSFET), process nodes are constantly improving, integrated circuit package precision requirements are also increasing, and the difficulty of controlling bonding quality and reliability is increasing, the crystal of the pad on the surface of the aluminum (Al) pad has become a real problem in the semiconductor industry. When doing a shear test, this kind of defect will cause the package to fail[Fig. 1]. The essay proposes that different products have different cover transmission rate, which will affect the degree of pad crystal a degree of influence of different cover T/R on the crystal of the pad and the solution to provide a strong evidence for the subsequent solution of the pad crystal problem. The experimental results show that the product cover T/R is the smaller, the greater the chances crystal of the pad.