Phase Transformation in PZT Films Studied by Scanning Probe Microscopy

Z. H. Wang, Y. Li, P. Huang, H. Zeng, Z. Ren, M. G. Huang
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Abstract

PZT thin films on Pt/SiO2/Si substrate were prepared by RF magnetron sputtering. Atomic force microscopy (AFM) and piezoresponse force microscopy (PFM) were employed to investigate some behavior of the phase transformation process from non-perovskite to perovskite. It was found that the ferroelectric domains in PZT film during a rapid thermal annealing grew in rosette mode, the correlation between topography and perovskite phase area was formed in early thermal annealing process, and then was broken as further annealed time increased. With the annealed time increased, some phase transformation area changed from no ferroelectric domain to mono ferroelectric domain and to multi ferroelectric domain finally.
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扫描探针显微镜研究PZT薄膜的相变
采用射频磁控溅射技术在Pt/SiO2/Si衬底上制备了PZT薄膜。采用原子力显微镜(AFM)和压电响应力显微镜(PFM)研究了非钙钛矿向钙钛矿相变过程中的一些行为。结果表明,在快速退火过程中,PZT薄膜中的铁电畴以玫瑰花结模式生长,形貌与钙钛矿相面积之间的相关性在热退火早期形成,随着退火时间的延长而断裂。随着退火时间的延长,部分相变区域由无铁电畴变为单铁电畴,最后变为多铁电畴。
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