{"title":"Development of non-contact hardness measurements with crater formations by gas cluster ions","authors":"N. Toyoda","doi":"10.1109/NANO.2016.7751355","DOIUrl":null,"url":null,"abstract":"Crater formations with gas cluster ion beam (GCIB) were used for non-contact hardness measurement of thin films. The crater inner diameter formed with size-selected Ar cluster ions decreased with inverse cube root of film hardness. When the total acceleration energy was the same, cluster size did not affect the crater inner diameter. In addition, high ionization electron voltage (Ve) cause wide distribution of crater depth and diameter due to multiply charged GCIB.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"45 1","pages":"381-382"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2016.7751355","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Crater formations with gas cluster ion beam (GCIB) were used for non-contact hardness measurement of thin films. The crater inner diameter formed with size-selected Ar cluster ions decreased with inverse cube root of film hardness. When the total acceleration energy was the same, cluster size did not affect the crater inner diameter. In addition, high ionization electron voltage (Ve) cause wide distribution of crater depth and diameter due to multiply charged GCIB.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
