Y. Nakao, T. Nakamura, A. Kamisawa, H. Takasu, N. Soyama, G. Sasaki, T. Atsuki, T. Yonezawa, K. Ogi
{"title":"Electrical properties of PZT thin films derived from sol-gel solution containing photo-sensitive water-generater","authors":"Y. Nakao, T. Nakamura, A. Kamisawa, H. Takasu, N. Soyama, G. Sasaki, T. Atsuki, T. Yonezawa, K. Ogi","doi":"10.1109/ISAF.1994.522399","DOIUrl":null,"url":null,"abstract":"The photo sensitivity of sol-gel solution of PbZr/sub x/Ti/sub 1-x/O/sub 3/ (PZT) was confirmed. A coated film of the sol-gel solution on Si and Ir/IrO/sub 2//SiO/sub 2//Si substrates was exposed to an excimer laser and developed with 2-methoxyethanol diluted with isopropyl alcohol. More than 900 mJ/cm/sup 2/ of exposure was required to obtain the micro patterns. The film was finally annealed at 700/spl deg/C for 60 s by rapid thermal annealing (RTA). From this process, half-micron patterns of PZT films were obtained. The 200-nm-thick film showed P/sub r/ of 16.6 /spl mu/C/cm/sup 2/ and E/sub c/ of 38.8 kV/cm. After 1/spl times/10/sup 12/ cycles of switching pulses, the films showed no degradation of remanent polarization. Studying for 1-transistor-type ferroelectric memory, metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure was prepared with this process.","PeriodicalId":20488,"journal":{"name":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","volume":"59 1","pages":"450-453"},"PeriodicalIF":0.0000,"publicationDate":"1994-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.1994.522399","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
The photo sensitivity of sol-gel solution of PbZr/sub x/Ti/sub 1-x/O/sub 3/ (PZT) was confirmed. A coated film of the sol-gel solution on Si and Ir/IrO/sub 2//SiO/sub 2//Si substrates was exposed to an excimer laser and developed with 2-methoxyethanol diluted with isopropyl alcohol. More than 900 mJ/cm/sup 2/ of exposure was required to obtain the micro patterns. The film was finally annealed at 700/spl deg/C for 60 s by rapid thermal annealing (RTA). From this process, half-micron patterns of PZT films were obtained. The 200-nm-thick film showed P/sub r/ of 16.6 /spl mu/C/cm/sup 2/ and E/sub c/ of 38.8 kV/cm. After 1/spl times/10/sup 12/ cycles of switching pulses, the films showed no degradation of remanent polarization. Studying for 1-transistor-type ferroelectric memory, metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure was prepared with this process.
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