{"title":"A micropower battery current sensor with ±0.03% (3σ) inaccuracy from −40 to +85°C","authors":"S. H. Shalmany, D. Draxelmayr, K. Makinwa","doi":"10.1109/ISSCC.2013.6487781","DOIUrl":null,"url":null,"abstract":"This paper presents a micropower current-sensing system (CSS) for battery monitoring, which consists of a calibrated shunt resistor, a ΔΣ ADC, and a dynamic bandgap reference (BGR). For currents ranging from 0 to 1A over the industrial temperature range (-40°C to +85°C), it exhibits 10μA offset and ±0.03% (3σ) gain error, which is a 3× improvement on systems with off-chip external references [1,2]. This level of accuracy is achieved by the use of dynamic error-correction techniques, digital temperature compensation, and an on-chip dynamic BGR, whose spread is corrected by a single room-temperature trim.","PeriodicalId":6378,"journal":{"name":"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers","volume":"1 1","pages":"386-387"},"PeriodicalIF":0.0000,"publicationDate":"2013-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"33","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2013.6487781","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 33
Abstract
This paper presents a micropower current-sensing system (CSS) for battery monitoring, which consists of a calibrated shunt resistor, a ΔΣ ADC, and a dynamic bandgap reference (BGR). For currents ranging from 0 to 1A over the industrial temperature range (-40°C to +85°C), it exhibits 10μA offset and ±0.03% (3σ) gain error, which is a 3× improvement on systems with off-chip external references [1,2]. This level of accuracy is achieved by the use of dynamic error-correction techniques, digital temperature compensation, and an on-chip dynamic BGR, whose spread is corrected by a single room-temperature trim.