M. Tischler, B. D. Parker, J. DeGelormo, T. Jackson, F. Cardone, M. Goorsky
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Abstract
The effects of uncapped rapid thermal annealing in an AsH/sub 3/ ambient on the thermal stability of InGaAs/InAlAs two dimensional electron gas (2DEG) structures are discussed. It is shown that the rapid thermal annealing results in the formation of a parasitic charge near the back of the InGaAs channel. The annealing does not result in large changes in the heterostructure or the intentional dopant position.<>
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