Chemical mapping and its application to interfaces, point defects and materials processing

Abstract

This review has two primary aims. First, it describes how the composition of materials may be quantitatively mapped with near-atomic resolution and sensitivity. Second,it outlines how this capability may be used to investigate important solid-state phenomena at the microscopic level. Specifically, the following topics are considered: interfacial roughness in semiconductor heterostructures and its effect on the optical properties of quantum wells; stability of modern interfaces against interdiffusion during typical annealing treatments; diffusion of intrinsic point defects in semiconductors; and the microscopics of ion implantation.