Jongseok Kim, Sangwook Kwon, Hong Youngtack, Hee-Moon Jeong, Sanghoon Lee
{"title":"Variable pivot seesaw actuated RF MEMS switch for reconfigurable system application","authors":"Jongseok Kim, Sangwook Kwon, Hong Youngtack, Hee-Moon Jeong, Sanghoon Lee","doi":"10.1109/MEMSYS.2007.4433000","DOIUrl":null,"url":null,"abstract":"A DC contact series MEMS switch for reconfigurable antenna system application is designed, fabricated, and its RF characteristics are measured. Variable pivot seesaw concept is applied because this design minimize the driving voltage and prevent stiction of membrane. The proposed switch structure is fabricated on the Si wafer, a coplanar waveguide(CPW) signal lines and electrodes are fabricated on the glass wafer. Both wafer are bonded by anodic bonding method. The designed chip size is within 2 mmx2 mm and it is actuated by electrostatic force. Low actuation voltage has been achieved by means of small distance between signal line and membrane using the design scheme, switching is executed in the pull-in range. Minimum actuation voltage is about 10-12 V, isolation is around 50 dB and insertion loss is about 0.25 dB at 2 GHz.","PeriodicalId":6388,"journal":{"name":"2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS)","volume":"1 1","pages":"775-778"},"PeriodicalIF":0.0000,"publicationDate":"2007-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MEMSYS.2007.4433000","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
A DC contact series MEMS switch for reconfigurable antenna system application is designed, fabricated, and its RF characteristics are measured. Variable pivot seesaw concept is applied because this design minimize the driving voltage and prevent stiction of membrane. The proposed switch structure is fabricated on the Si wafer, a coplanar waveguide(CPW) signal lines and electrodes are fabricated on the glass wafer. Both wafer are bonded by anodic bonding method. The designed chip size is within 2 mmx2 mm and it is actuated by electrostatic force. Low actuation voltage has been achieved by means of small distance between signal line and membrane using the design scheme, switching is executed in the pull-in range. Minimum actuation voltage is about 10-12 V, isolation is around 50 dB and insertion loss is about 0.25 dB at 2 GHz.