PLD Grown Polycrystalline Tungsten Disulphide (WS2) Films

Salman Alfihed, M. I. Hossain, A. Alharbi, A. Alyamani, F. Alharbi
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引用次数: 16

Abstract

Polycrystalline WS2 films were grown by pulsed laser deposition (PLD) system at relatively low temperature. The main objective of this study is to optimize the growth conditions for polycrystalline WS2 films at relatively low temperature to use them for photovoltaics (PVs). Different growth conditions and substrates are used and examined systematically. It is found out that films grown on strontium titanate SrTiO3 (STO) substrate have the best structural properties when compared to other substrates examined in this work. X-ray diffraction and optical characterizations of these films reveal crystallographic growth and very promising optical properties for PVs. Furthermore, it was observed that higher growth temperature (>300°C) has an unfavorable effect on the layers by creating some tungsten metallic droplets.
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PLD生长的多晶二硫化钨(WS2)薄膜
采用脉冲激光沉积(PLD)系统在较低温度下生长WS2多晶薄膜。本研究的主要目的是在相对较低的温度下优化多晶WS2薄膜的生长条件,以将其用于光伏(pv)。系统地使用和检查了不同的生长条件和基质。研究发现,在钛酸锶SrTiO3 (STO)衬底上生长的薄膜与其他衬底相比具有最佳的结构性能。这些薄膜的x射线衍射和光学特性揭示了pv的晶体生长和非常有前途的光学性质。此外,观察到较高的生长温度(>300℃)会产生一些钨金属液滴,从而对层产生不利影响。
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