Е. В. Демидов, В. М. Грабов, В.А. Комаров, А. В. Суслов, В. А. Герега, А.Н. Крушельницкий
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Abstract
The reasons for increasing the charge carriers concentration in thin bismuth films are discussed. The concentration was calculated on the basis of the measured electrical and galvanomagnetic coefficients at the temperature 77K under the two-band approximation and the assumption that the charge carriers free path in the film is isotropic.
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