C. Daigle, T. Moutinho, Michelle Beauchemin, Christopher Qualey
{"title":"Aluminum Voiding And Delamination Induced BY High Intrinsic Stress","authors":"C. Daigle, T. Moutinho, Michelle Beauchemin, Christopher Qualey","doi":"10.1109/ASMC49169.2020.9185192","DOIUrl":null,"url":null,"abstract":"A typical robust metal stack consists of a Ti/TiN underlayer, aluminum, and a Ti/TiN top anti-reflective coating (ARC). This common film stack has been found to be susceptible to random yield loss based on the purity of the underlying titanium. The Ti purity ultimately changes the grain structure of the aluminum, resulting in higher intrinsic stress, delamination, and voiding, particularly in areas with dense via arrays. This paper will explain the potential mechanism for this phenomenon and propose a solution for how to prevent the metal voiding by modifying chamber conditioning.","PeriodicalId":6771,"journal":{"name":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","volume":"26 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2020-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC49169.2020.9185192","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A typical robust metal stack consists of a Ti/TiN underlayer, aluminum, and a Ti/TiN top anti-reflective coating (ARC). This common film stack has been found to be susceptible to random yield loss based on the purity of the underlying titanium. The Ti purity ultimately changes the grain structure of the aluminum, resulting in higher intrinsic stress, delamination, and voiding, particularly in areas with dense via arrays. This paper will explain the potential mechanism for this phenomenon and propose a solution for how to prevent the metal voiding by modifying chamber conditioning.