Jian'an Xu, F. Rao, Zhitang Song, Mengjiao Xia, Cheng Peng, Yifeng Gu, Min Zhu, Liangcai Wu, Bo Liu, S. Feng
{"title":"High Speed Phase Change Memory Based on SnTe-Doped Ge2Sb2Te5 Material","authors":"Jian'an Xu, F. Rao, Zhitang Song, Mengjiao Xia, Cheng Peng, Yifeng Gu, Min Zhu, Liangcai Wu, Bo Liu, S. Feng","doi":"10.1149/2.006203ESL","DOIUrl":null,"url":null,"abstract":"SnTe-doped Ge2Sb2Te5 material is proposed to increase the phase change speed. The reversible phase change can be achieved by a voltage pulse as short as 30ns. Laser-induced crystallization speed is accelerated due to SnTe incorporation. SnTe plays a same","PeriodicalId":11627,"journal":{"name":"Electrochemical and Solid State Letters","volume":"12 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2012-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrochemical and Solid State Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.006203ESL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
SnTe-doped Ge2Sb2Te5 material is proposed to increase the phase change speed. The reversible phase change can be achieved by a voltage pulse as short as 30ns. Laser-induced crystallization speed is accelerated due to SnTe incorporation. SnTe plays a same
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