{"title":"Compact Modeling of Diode with VHDL-AMS Including Reverse Recovery","authors":"L. Coyitangiye, R. Grisel","doi":"10.1109/ESIME.2006.1643952","DOIUrl":null,"url":null,"abstract":"A diode VHDL-AMS model is presented which can simulate the diode reverse recovery behavior. For VHDL-AMS to be useful to the analog design community, efficient semiconductor device model must be available. The model is based on the charge transport equations and they are simplified using the lumped-charge modeling technique. The model is demonstrated on the Advance-MS simulator and compared to measurements","PeriodicalId":60796,"journal":{"name":"微纳电子与智能制造","volume":"61 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2006-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"微纳电子与智能制造","FirstCategoryId":"1087","ListUrlMain":"https://doi.org/10.1109/ESIME.2006.1643952","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A diode VHDL-AMS model is presented which can simulate the diode reverse recovery behavior. For VHDL-AMS to be useful to the analog design community, efficient semiconductor device model must be available. The model is based on the charge transport equations and they are simplified using the lumped-charge modeling technique. The model is demonstrated on the Advance-MS simulator and compared to measurements
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