{"title":"HSPICE macromodel of a Programmable Metallization Cell (PMC) and its application to memory design","authors":"P. Junsangsri, F. Lombardi, Jie Han","doi":"10.1145/2770287.2770299","DOIUrl":null,"url":null,"abstract":"This paper presents a new HSPICE macromodel of a Programmable Metallization Cell (PMC). The electrical characteristics of a PMC are simulated by using a geometric model that considers the vertical and lateral growth/dissolution of the metallic filament. The selection of the parameters is based on operational features, so the electrical characterization of the PMC is simple, easy to simulate and intuitive. The I-V and R-V plots of a PMC are generated at a very small error compared with experimental data; the proposed model also shows a small error for the relationship between the switching time and the pulse amplitude. The use of a PMC as resistive element in a crossbar memory is also presented; it is shown that a PMC-based crossbar offers substantial improvements over other resistive technologies.","PeriodicalId":6519,"journal":{"name":"2014 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","volume":"37 1","pages":"45-50"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2770287.2770299","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
This paper presents a new HSPICE macromodel of a Programmable Metallization Cell (PMC). The electrical characteristics of a PMC are simulated by using a geometric model that considers the vertical and lateral growth/dissolution of the metallic filament. The selection of the parameters is based on operational features, so the electrical characterization of the PMC is simple, easy to simulate and intuitive. The I-V and R-V plots of a PMC are generated at a very small error compared with experimental data; the proposed model also shows a small error for the relationship between the switching time and the pulse amplitude. The use of a PMC as resistive element in a crossbar memory is also presented; it is shown that a PMC-based crossbar offers substantial improvements over other resistive technologies.