HSPICE macromodel of a Programmable Metallization Cell (PMC) and its application to memory design

P. Junsangsri, F. Lombardi, Jie Han
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引用次数: 7

Abstract

This paper presents a new HSPICE macromodel of a Programmable Metallization Cell (PMC). The electrical characteristics of a PMC are simulated by using a geometric model that considers the vertical and lateral growth/dissolution of the metallic filament. The selection of the parameters is based on operational features, so the electrical characterization of the PMC is simple, easy to simulate and intuitive. The I-V and R-V plots of a PMC are generated at a very small error compared with experimental data; the proposed model also shows a small error for the relationship between the switching time and the pulse amplitude. The use of a PMC as resistive element in a crossbar memory is also presented; it is shown that a PMC-based crossbar offers substantial improvements over other resistive technologies.
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可编程金属化单元(PMC) HSPICE宏模型及其在存储器设计中的应用
本文提出了一种新的可编程金属化电池(PMC) HSPICE宏模型。采用考虑金属丝垂直和横向生长/溶解的几何模型模拟了PMC的电特性。参数的选择是基于操作特性的,因此PMC的电气特性简单,易于模拟和直观。与实验数据相比,PMC的I-V和R-V图的生成误差很小;该模型对开关时间与脉冲幅值之间的关系误差较小。本文还介绍了在交叉棒存储器中使用PMC作为电阻元件的方法;结果表明,基于pmc的交叉棒比其他电阻技术有了实质性的改进。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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