Experimental demonstration of a fully digital capacitive sensor interface built entirely using carbon-nanotube FETs

M. Shulaker, J. V. Rethy, G. Hills, Hong-Yu Chen, G. Gielen, H. Wong, S. Mitra
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引用次数: 33

Abstract

This paper presents a complete sensor interface implemented entirely using CNFETs that can be fabricated reproducibly in a VLSI-compatible fashion. This is made possible by using the imperfection-immune paradigm [4], which successfully overcomes major obstacles for CNFET-based circuits: mis-positioned and metallic carbon nanotubes (CNTs). 44 CNFETs, each consisting of 10 to 200 CNTs depending on transistor sizing, are used to build the circuit. In contrast, earlier demonstrations of CNFET-based circuits included only small stand-alone components such as an adder sum, latch, percolation transport-based decoder, and ring oscillator on a single CNT [4]. Because it is easier to implement digital circuits using immature technologies compared to analog circuits, highly-digital sensor interfaces such as the PLL-based design in [5] are ideal implementations when using a new technology. The implemented capacitive sensor interface is based on a first-order Bang-Bang Phase-Locked Loop (BBPLL) digital architecture, which processes the sensor information entirely in the frequency domain (Fig. 6.8.1). Its funcationality is described in detail in [5].
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完全使用碳纳米管场效应管构建的全数字电容式传感器接口的实验演示
本文提出了一个完全使用cnfet实现的完整传感器接口,该接口可以以vlsi兼容的方式可重复制造。这是通过使用不完美免疫范式[4]实现的,该范式成功克服了基于cnfet的电路的主要障碍:错误定位和金属碳纳米管(CNTs)。44个cnfet,每个由10到200个cnt组成,这取决于晶体管的尺寸,用于构建电路。相比之下,早期基于cnfet的电路演示仅包括单个CNT上的小型独立组件,如加法器和、锁存器、基于渗透传输的解码器和环形振荡器[4]。由于与模拟电路相比,使用不成熟的技术实现数字电路更容易,因此在使用新技术时,高数字传感器接口(如[5]中基于锁相环的设计)是理想的实现。所实现的电容式传感器接口基于一阶Bang-Bang锁相环(BBPLL)数字架构,该架构完全在频域处理传感器信息(图6.8.1)。其功能在[5]中有详细描述。
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