Takeshi Matsumoto, Masatoshi Onoda, Kohichi Orihira, J. Tatemichi, E. Guiot, Olivier Petit, Thibaut Courrenq
{"title":"High throughput ion implanter for environmentally beneficial products with III–V compound semiconductor","authors":"Takeshi Matsumoto, Masatoshi Onoda, Kohichi Orihira, J. Tatemichi, E. Guiot, Olivier Petit, Thibaut Courrenq","doi":"10.1109/IIT.2014.6940024","DOIUrl":null,"url":null,"abstract":"We have developed an ultra-high current ion implantation system for high throughput wafer processing. The ion source is designed based on implanters used in the flat panel display industry to produce 80 cm high beams which exceed 80 mA. Multiple wafers are processed at a time with the large-sized beam. The implantation tool exhibited throughput of 107 and 38 wafers per hour for 1E16 and 1E17 ions/cm2, respectively. Successful InP layer transfer with smooth surface was demonstrated using Smart Cut™ technology.","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"3 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 20th International Conference on Ion Implantation Technology (IIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2014.6940024","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We have developed an ultra-high current ion implantation system for high throughput wafer processing. The ion source is designed based on implanters used in the flat panel display industry to produce 80 cm high beams which exceed 80 mA. Multiple wafers are processed at a time with the large-sized beam. The implantation tool exhibited throughput of 107 and 38 wafers per hour for 1E16 and 1E17 ions/cm2, respectively. Successful InP layer transfer with smooth surface was demonstrated using Smart Cut™ technology.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
