{"title":"A Two-Phase 2MHz DSD GaN Power Converter with Master-Slave AO2T Control for Direct 48V/1V DC-DC Conversion","authors":"Dong Yan, Xugang Ke, D. Ma","doi":"10.23919/VLSIC.2019.8778017","DOIUrl":null,"url":null,"abstract":"This paper reports a GaN power converter that achieves direct 48V/1V DC-DC voltage conversion with a two-phase DSD architecture at 2MHz, pushing the minimum duty ratio to a record low level of 2.1%. The AO2T control with elastic ON-time modulator leads to significant improvement on transient response and voltage droop performance, compared to prior arts. A master phase mirror enables adaptive master-slave phase operation, accomplishing automatic phase current balancing for improved reliability. The converter achieves a peak efficiency of 85.4%, with an active die of 1.46mm2 on 180nm HV BCD process.","PeriodicalId":6707,"journal":{"name":"2019 Symposium on VLSI Circuits","volume":"3 1","pages":"C170-C171"},"PeriodicalIF":0.0000,"publicationDate":"2019-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSIC.2019.8778017","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
This paper reports a GaN power converter that achieves direct 48V/1V DC-DC voltage conversion with a two-phase DSD architecture at 2MHz, pushing the minimum duty ratio to a record low level of 2.1%. The AO2T control with elastic ON-time modulator leads to significant improvement on transient response and voltage droop performance, compared to prior arts. A master phase mirror enables adaptive master-slave phase operation, accomplishing automatic phase current balancing for improved reliability. The converter achieves a peak efficiency of 85.4%, with an active die of 1.46mm2 on 180nm HV BCD process.
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