{"title":"A study on Silicon Carbide (SiC) wafer using ion implantation","authors":"Weijiang Zhao, K. Tobikawa, T. Nagayama, S. Sakai","doi":"10.1109/IIT.2014.6940058","DOIUrl":null,"url":null,"abstract":"In this study, we investigated an ion implantation effect to change the physical property of High Purity Semi-Insulating Silicon Carbide (HPSI-SiC) wafers. Ion implanter IMPHEAT® was used to implant an ion beam into SiC wafers. The spectroscopic analysis was carried out before and after ion implantation. The chucking force was also measured before and after ion implantation to confirm change of the force. Additionally, the implant depth profile was investigated with the effect of a Plasma Flood Gun (PFG).","PeriodicalId":6548,"journal":{"name":"2014 20th International Conference on Ion Implantation Technology (IIT)","volume":"79 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2014-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 20th International Conference on Ion Implantation Technology (IIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIT.2014.6940058","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this study, we investigated an ion implantation effect to change the physical property of High Purity Semi-Insulating Silicon Carbide (HPSI-SiC) wafers. Ion implanter IMPHEAT® was used to implant an ion beam into SiC wafers. The spectroscopic analysis was carried out before and after ion implantation. The chucking force was also measured before and after ion implantation to confirm change of the force. Additionally, the implant depth profile was investigated with the effect of a Plasma Flood Gun (PFG).
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
