Chih-Pin Lin, Ching-Ting Lin, Pang-Shiuan Liu, Ming‐Jiue Yu, T. Hou
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Abstract
Transition metal dichalcogenide (TMD)-based field effect transistors are currently being actively researched as a post-silicon solution for integrated circuits. This paper discusses two of the major challenges: grain size in polycrystalline TMD monolayer films and chemical doping to improve TMD/metal contacts. The characterization techniques and the correlation with device electrical characteristics are investigated.
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