Chin-Hao Chang, Meng-Hsiu Wu, Meng-Hsien Tsai, Chiao-Yi Huang, C. Chao
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引用次数: 0
Abstract
Random Telegraph Noise (RTN) is a type of electronic noise that occurs in semiconductors and ultra-thin gate oxide films. RTN data acquisition and analysis require multiple measurements of millions of devices which is time consuming. This paper presents the design of a real-time RTN analysis system which achieved 17x speed boost with same accuracy by real-time processing noise data through DDR3 memory access. The designed system reduces the per wafer RTN analysis time from 5.5 hours to 0.33 hour.
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