III-V on Si solar cells behavior at NIRT and LILT conditions for space applications

Karim Medjoubi, R. Cariou, J. Lefévre, L. Vauche, E. Veinberg-Vidal, C. Jany, Cedric Roasting, Vincent Amalbert, B. Boizot
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Abstract

In this study, we review the potential of III-V/Si solar cell technology for space applications. We present here the experimental results of wafer bonded 2-terminal III-V/Si solar cells electron irradiation. The Begin-Of-Life (BOL) and End-Of-Life (EOL) electrical performances, after 1-MeV electron irradiations, are characterized under AM0 spectrum, and the radiation hardness is compared in Normal Irradiance Room Temperature (NIRT) and Low Irradiance Low Temperature (LILT) conditions.
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空间应用中硅太阳能电池在NIRT和LILT条件下的性能
在本研究中,我们回顾了III-V/Si太阳能电池技术在空间应用方面的潜力。本文给出了晶圆键合2端III-V/Si太阳能电池电子辐照的实验结果。在AM0谱下表征了1-MeV电子辐照后的寿命起始(BOL)和寿命终止(EOL)电学性能,并比较了正常辐照室温(NIRT)和低辐照低温(LILT)条件下的辐射硬度。
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