RF switches using phase change materials

2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS 2013) : Taipei, Taiwan, 20-24 January 2013. IEEE International Conference on Micro Electro Mechanical Systems (26th : 2013 : Taipei, Taiwan) Pub Date : 2013-03-07 DOI:10.1109/MEMSYS.2013.6474221

Yonghyun Shim, G. Hummel, M. Rais-Zadeh

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引用次数: 48

Abstract

Phase change materials are attractive candidates for use in ohmic switches as they can be thermally transitioned between amorphous and crystalline states, showing several orders of magnitude change in resistivity. Phase change switches are fast, small form factor, and can be readily integrated with MEMS and CMOS electronics. As such, they have a great potential for implementing next-generation high-speed reconfigurable RF modules. In this paper, we report on the RF properties of germanium tellurium, a PC material, and its use in RF switching applications. Intrinsic resistance and capacitance at the ON (crystalline) and OFF (amorphous) states of a directly heated switch are compared and characterized. Other properties such as phase transition conditions, insertion loss, return loss, and power handling capability of the switch are also measured and analyzed.

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采用相变材料的射频开关

相变材料是用于欧姆开关的有吸引力的候选者，因为它们可以在无定形和晶体状态之间热转变，显示出电阻率的几个数量级变化。相变开关速度快，外形小，可以很容易地与MEMS和CMOS电子器件集成。因此，它们具有实现下一代高速可重构射频模块的巨大潜力。本文报道了PC材料碲锗的射频特性及其在射频开关中的应用。比较和表征了直接加热开关在ON(晶体)和OFF(非晶)状态下的固有电阻和电容。对开关的相变条件、插入损耗、回波损耗和功率处理能力等特性也进行了测量和分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS 2013) : Taipei, Taiwan, 20-24 January 2013. IEEE International Conference on Micro Electro Mechanical Systems (26th : 2013 : Taipei, Taiwan)

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