Heterogeneous Integration Using Organic Interposer Technology

George Scott, JaeHun Bae, Kiyeul Yang, WonMyoung Ki, Nathan Whitchurch, M. Kelly, C. Zwenger, JongHyun Jeon, Taekyeong Hwang
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引用次数: 11

Abstract

As the costs of advanced node silicon have risen sharply with the 7 and 5-nanometer nodes, advanced packaging is coming to a crossroad where it is no longer fiscally prudent to pack all desired functionality into a single die. While single-die packages will still be around, the high-end market is shifting towards multiple-die packages to reduce overall costs and improve functionality. This shift is not just to add local memory, such as the addition of high-bandwidth memory (HBM) module(s) to an application-specific integrated circuit (ASIC) die, but also to separate what would have been a monolithic ASIC in prior generations to its constituent parts, such as the central processing unit (CPU) cores, serializer/deserializer (SerDes) and input/output (I/O) blocks. By splitting the monolithic die into smaller functional blocks, costs can be reduced through improved wafer yield on the smaller CPU cores and re-using older, vetted intellectual property (IP) from a prior silicon node for the I/O and SerDes that do not necessarily need the most advanced silicon node.The traditional approach to fine-pitch multi-die packaging has been silicon interposers with Through Silicon Vias (TSVs). While the TSV approach has ushered in new performance levels never seen before, one of the major limitations is the inability to scale with higher and higher frequencies. The maximum frequency that a silicon interposer can handle between die-to-die interconnects is approximately 4 GHz due to the parasitics of the silicon. As dieto-die interconnects increase their bandwidth to higher and higher levels, the 4-6 GHz limitation can become a major bottleneck. Eliminating the silicon and silicon dioxide dielectrics and using polymers as the dielectric and the interposer itself can solve this problem.This paper will discuss how to use High-Density Fan-Out (HDFO) technology to replace the TSV-bearing silicon interposer with an organic interposer to enable higher bandwidth die-to-die interconnects for heterogeneous integration.
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采用有机中间体技术的异构集成
随着先进节点硅的成本随着7纳米和5纳米节点的急剧上升,先进封装正走到一个十字路口,在这个十字路口,将所有所需的功能封装到一个芯片中不再是财政上的谨慎。虽然单晶片封装仍将存在,但高端市场正在转向多晶片封装,以降低总体成本并提高功能。这种转变不仅仅是增加本地内存,例如在特定应用集成电路(ASIC)芯片中添加高带宽内存(HBM)模块,而且还将前几代的单片ASIC与其组成部分分开,例如中央处理单元(CPU)核心,序列化/反序列化器(SerDes)和输入/输出(I/O)块。通过将单片芯片拆分为更小的功能块,可以通过提高较小CPU内核的晶圆产量来降低成本,并且可以将以前的硅节点重新用于I/O和SerDes,这些硅节点不一定需要最先进的硅节点。传统的小间距多模封装方法是采用硅通孔(tsv)的硅中间层。虽然TSV方法带来了前所未有的新性能水平,但主要限制之一是无法在越来越高的频率下进行扩展。由于硅的寄生性,硅中间层可以处理的模对模互连之间的最大频率约为4ghz。随着芯片互连将其带宽提高到越来越高的水平,4-6 GHz的限制可能成为主要瓶颈。消除硅和二氧化硅电介质,使用聚合物作为介电介质和介电介质本身可以解决这个问题。本文将讨论如何使用高密度扇出(HDFO)技术用有机中间层取代承载tsv的硅中间层,以实现更高带宽的模对模互连,实现异构集成。
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