Seung-Hwan Shin, Dong-Kyo Shim, Jaeyong Jeong, O. Kwon, Sangyong Yoon, Myung-Hoon Choi, Tae-Young Kim, H. Park, Hyun-Jun Yoon, Youngsun Song, Yoon-Hee Choi, Sang-Won Shim, Yang-Lo Ahn, Ki-Tae Park, Jin-Man Han, K. Kyung, Young-Hyun Jun
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引用次数: 40
Abstract
We have developed a new 3-bit programming algorithm of high performance TLC(Triple-level-cell, 3-bit/cell) NAND flash memories for 20nm node and beyond. By using the proposed 3-bit algorithm based on reprogramming with SLC-to-TLC migration, performance and BER is improved by 50% and 68%, respectively, compared to conventional method. The proposed algorithm is successfully implemented in 21nm 64Gb TLC NAND flash product that provides 8MB/s write and 400MB/s read throughputs.
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