{"title":"Transparent diamond-based electrolyzer for integration with solar cell","authors":"C. Pietzka, Z. Gao, Y. Xu, E. Kohn","doi":"10.1109/DRC.2012.6257014","DOIUrl":null,"url":null,"abstract":"In this study a concept of an electrolyzer operating in rather aggressive solutions (and potentially salt water) and with the potential of monolithic integration with a solar cell structure has been presented. The electrolyzer structure is based on a metal dot modified CVD diamond electrode structure grown by HFCVD, a technique which can be scaled to large surface areas. Presently, only the III-Nitride semiconductor materials system seems compatible with the growth conditions required for high-quality NCD electrode material. However, here the incorporation of low bandgap InGaN quantum well structures would be needed, but is still outstanding.","PeriodicalId":6808,"journal":{"name":"70th Device Research Conference","volume":"3 1","pages":"279-280"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"70th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2012.6257014","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this study a concept of an electrolyzer operating in rather aggressive solutions (and potentially salt water) and with the potential of monolithic integration with a solar cell structure has been presented. The electrolyzer structure is based on a metal dot modified CVD diamond electrode structure grown by HFCVD, a technique which can be scaled to large surface areas. Presently, only the III-Nitride semiconductor materials system seems compatible with the growth conditions required for high-quality NCD electrode material. However, here the incorporation of low bandgap InGaN quantum well structures would be needed, but is still outstanding.