F. Fu, Shujun Deng, Liang Wang, Hongjian Liao, J Zhang
{"title":"The negative impact of excessive vanadium doping for SiC crystal growth","authors":"F. Fu, Shujun Deng, Liang Wang, Hongjian Liao, J Zhang","doi":"10.1109/SSLChinaIFWS54608.2021.9675239","DOIUrl":null,"url":null,"abstract":"The effect of heavy vanadium doping on the growth of SiC single crystal was investigated. Pyramidal and cubic vanadium precipitates were discovered on the as-grown surface by DIC microscope. Further observation by AFM and SEM shows that the original parallel growth steps are twisted due to the blockage of vanadium precipitates, forming a triangular stepped flow with vanadium precipitates as the vertex. The results of secondary ion energy spectroscopy show that the doping amount of vanadium is close to its saturated solubility in SiC.","PeriodicalId":6816,"journal":{"name":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","volume":"77 1","pages":"68-70"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSLChinaIFWS54608.2021.9675239","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The effect of heavy vanadium doping on the growth of SiC single crystal was investigated. Pyramidal and cubic vanadium precipitates were discovered on the as-grown surface by DIC microscope. Further observation by AFM and SEM shows that the original parallel growth steps are twisted due to the blockage of vanadium precipitates, forming a triangular stepped flow with vanadium precipitates as the vertex. The results of secondary ion energy spectroscopy show that the doping amount of vanadium is close to its saturated solubility in SiC.
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