Внеосевой асферический коллектор для экстремальной ультрафиолетовой литографии и мягкой рентгеновской микроскопии

И. В. Малышев, М. С. Михайленко, А. Е. Пестов, М. Н. Торопов, А. К. Чернышев, Николай Иванович Чхало
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Abstract

By the method of ion-beam shape correction, a small-sized ion beam formed a non–axisymmetric aspherical profile of the collector surface for an extreme ultraviolet radiation source TEUS-S100 with a numerical aperture of NA= 0.25, PV on the surface is 36.3 microns, the surface shape accuracy by standard deviation is 0.074 microns, which allowed to obtain a focusing spot with a width of 300 microns at half-height. To solve the problem, the technological ion source KLAN-53M was upgraded – the flat ion-optical system was replaced with a focusing one. The ion-optical system consisting of a pair of concave grids with a radius of curvature of 60 mm provided the following parameters of the ion beam: the ion current is 20 mA, the width at half–height is 8.2 mm at a distance of 66 mm from the cutoff of the ion source.
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极端紫外线石刻和柔性x射线显微镜的外轴流形流放器
采用离子束形状校正的方法,对数值孔径为NA= 0.25的极紫外辐射源TEUS-S100,采用小尺寸离子束在集热器表面形成非轴对称非球面轮廓,表面PV为36.3微米,表面形状精度标准差为0.074微米,可获得半高处宽度为300微米的聚焦光斑。为了解决这个问题,对技术离子源KLAN-53M进行了升级,将平面离子光学系统替换为聚焦离子光学系统。由一对曲率半径为60 mm的凹栅组成的离子光学系统提供了以下离子束参数:离子束电流为20 mA,半高宽度为8.2 mm,距离离子源截止点66 mm。
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