Baotong Zhang, Xiaokang Li, Yuancheng Yang, Haixia Li, Ru Huang, Ming Li, Peimin Lu
{"title":"Impact of Nanopillar-Type Electrode on HFOx -Based RRAM Performance","authors":"Baotong Zhang, Xiaokang Li, Yuancheng Yang, Haixia Li, Ru Huang, Ming Li, Peimin Lu","doi":"10.1109/CSTIC49141.2020.9282569","DOIUrl":null,"url":null,"abstract":"In this work, the performance of HfOx-based RRAM with 30nm nanopillar-type electrode was investigated. Experiment results show that the novel device has lower operation voltages and higher resistance ratio than conventional flat electrode RRAM. The underlying physical mechanism is attributed to the enhanced electric field by the nanopillar electrode. This research will provide a valuable guidance for future scaling of oxide-based RRAM.","PeriodicalId":6848,"journal":{"name":"2020 China Semiconductor Technology International Conference (CSTIC)","volume":"39 3 1","pages":"1-3"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 China Semiconductor Technology International Conference (CSTIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSTIC49141.2020.9282569","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
In this work, the performance of HfOx-based RRAM with 30nm nanopillar-type electrode was investigated. Experiment results show that the novel device has lower operation voltages and higher resistance ratio than conventional flat electrode RRAM. The underlying physical mechanism is attributed to the enhanced electric field by the nanopillar electrode. This research will provide a valuable guidance for future scaling of oxide-based RRAM.
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