Low Operating Voltage and High Efficiency Vertical GaN Based LEDs

W. Liu, L. Shan, Y. Chang, T. Doan, C. Tran, C. Chu, C. Cheng, J. Chu, F. Fan, H. Cheng
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Abstract

Vertical GaN based Light Emitting Diodes (VLED) on metal alloy base were realized [1] and characterized for solid state lighting application. An operating voltage of less than 2.9 Voltage from a high efficiency and high power blue LED was achieved. And, an efficiency of more than 120 lumens/watt from a white LED was achieved also. The dissipate heat more effectively than conventional and flip-chip LEDs, thanks to the higher thermal conductivity of a copper alloy base. This increases their maximum operating current and output power and makes them more suitable for solid-state lighting applications. In addition, these VLED exhibit many advantages over those on sapphire under extreme operation conditions for general lighting application. KeywordsLEDs, Solid State Lighting, VLED
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低工作电压和高效率的垂直GaN基led
在金属合金基上实现了垂直GaN基发光二极管(VLED)[1],并具有固态照明应用的特点。实现了工作电压低于2.9电压的高效率、高功率蓝光LED。而且,白光LED的效率也达到了120流明/瓦以上。由于铜合金的导热性更高,这种发光二极管比传统的倒装led更有效地散热。这增加了它们的最大工作电流和输出功率,使它们更适合固态照明应用。此外,在一般照明应用的极端操作条件下,这些VLED比蓝宝石led具有许多优点。关键词led,固态照明,VLED
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