{"title":"Monolithically integrated In/sub 0.60/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP photoreceivers with submicron devices","authors":"R. Lai, P. Bhattacharya, D. Pavlidis","doi":"10.1109/ICIPRM.1991.147399","DOIUrl":null,"url":null,"abstract":"The performance characteristics of planar InP-based PIN-MODFET front-end photoreceivers realized by molecular beam epitaxial regrowth are discussed. The full width at half maximum (FWHM) of the temporal response to photoexcitation for the full circuit is shown to be 60 ps, which translates to a bandwidth of approximately 6.5 GHz. The measured electrical 3-dB frequency response of the circuit with an effective input load resistance of 33 Omega is 15.0 GHz.<<ETX>>","PeriodicalId":6444,"journal":{"name":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","volume":"16 1","pages":"407-410"},"PeriodicalIF":0.0000,"publicationDate":"1991-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1991.147399","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The performance characteristics of planar InP-based PIN-MODFET front-end photoreceivers realized by molecular beam epitaxial regrowth are discussed. The full width at half maximum (FWHM) of the temporal response to photoexcitation for the full circuit is shown to be 60 ps, which translates to a bandwidth of approximately 6.5 GHz. The measured electrical 3-dB frequency response of the circuit with an effective input load resistance of 33 Omega is 15.0 GHz.<>
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