Using GaN HFET to replace MOSFET in DC/DC for space applications

M. Notarianni, B. Messant, P. Maynadier
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引用次数: 3

Abstract

To cope with space environment, radiation-hardened MOSFET switches are specifically designed in large dice (limiting their performance such as high parasitic capacitors compared to the ones designed for terrestrial application) and are packaged hermetically (SMDxx, TO25x,…). This leads to a high cost and large footprint, especially for DC/DC supplying high speed processors which require very low voltages and high currents (and consequently a lot of switches). Some GaN HFET designed for terrestrial applications have shown both good radiation robustness, small footprint and good intrinsic parameters (low Rdson and low parasitic capacitors). R&T activities have been done in cooperation with CNES (French Space Agency) to introduce GaN HFET, to put in place the screening process and to highlight the operating margins for space application. As the GaN HFET are massively produced for terrestrial applications, their intrinsic cost makes them attractive, even when space grade qualification has to be done (encapsulation in a hermetic package, screening, testing, burn-in …). Based on this work, Thales Alenia Space has developed and qualified a new generation of DC/DC converter for digital core using GaN HFET and is compared to a radiation hardened MOSFET solution.
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在空间应用中使用GaN HFET取代DC/DC中的MOSFET
为了应对空间环境,辐射强化MOSFET开关专门设计为大尺寸(限制其性能,例如与地面应用设计的高寄生电容器相比),并采用密封封装(SMDxx, TO25x,…)。这导致高成本和大占地面积,特别是对于需要非常低电压和大电流的DC/DC供电高速处理器(因此需要大量开关)。一些用于地面应用的氮化镓HFET显示出良好的辐射鲁棒性,占地面积小和良好的内在参数(低罗得和低寄生电容)。与法国空间局合作进行了研发活动,以引进氮化镓氟化镓,建立筛选程序,并突出空间应用的业务利润。由于氮化镓HFET大量生产用于地面应用,它们的内在成本使它们具有吸引力,即使必须进行空间级资格认证(密封封装,筛选,测试,老化……)。在此基础上,泰雷兹阿莱尼亚空间公司开发并验证了使用GaN HFET的新一代数字磁芯DC/DC转换器,并与辐射硬化MOSFET解决方案进行了比较。
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