Fully vertical gallium nitride trench MOSFETs fabricated with metal-free gate first process

Abstract

We report on the fabrication and characterization of fully vertical gallium nitride trench metal oxide semiconductor field effect transistors on native substrates with a metal-free gate first process and a chlorine-free trench etching method. Trenches were fabricated using sulfur hexafluoride and argon plasma etching in combination with alkaline wet etching posttreatment to create crystal oriented trenches along the a- and m-planes. Low pressure chemical vapor deposited silicon dioxide was used as gate dielectric with a poly-silicon gate contact. The metal-free gate structure was separated by a silicon dioxide passivation from any subsequent metal containing contact formation processing steps. The breakdown robustness of the gate structure was examined in the forward direction and no temperature dependence was observed up to 450 K. Fabricated trench MOSFETs showed only small hysteresis effects during transfer characterization but a positive threshold shift was observed. An inversion channel carrier field effect mobility of ≈ 10 cm 2/V s was extracted. The area specific on resistance was calculated to be 5.8 m Ω cm 2. Results for devices with differently oriented trenches were comparable and no significant performance difference was observed.