P. Jain, C. Zhang, Jiang'ao Huang, Kamal Ahmad, D. Xie, Zewen Liu
{"title":"Electrical properties of chemically doped graphene with Aluminum ions","authors":"P. Jain, C. Zhang, Jiang'ao Huang, Kamal Ahmad, D. Xie, Zewen Liu","doi":"10.1109/NANO.2016.7751527","DOIUrl":null,"url":null,"abstract":"In this article, we report a Field Effect Transistor (FET) with Aluminum doped graphene channel. The graphene is doped by spin coating a chemical dopant solution which tailored the electrical properties of graphene, such as transfer characteristics and output characteristics. The Doping of graphene was successfully verified by X-Ray photoelectron spectra (XPS) measurements. The testing results showed that the Dirac point (the value of gate to source voltage at which minimum value of drain to source current is attained) in transfer characteristics of Graphene Field Effect Transistor (GFET) shifted from VGS = 6.42 V to VGS = 40 V after doping. The slope of the output characteristics of GFET for VGS = 0 V increased from 3.56 to 5.44.","PeriodicalId":6646,"journal":{"name":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","volume":"39 1","pages":"743-746"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NANO.2016.7751527","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this article, we report a Field Effect Transistor (FET) with Aluminum doped graphene channel. The graphene is doped by spin coating a chemical dopant solution which tailored the electrical properties of graphene, such as transfer characteristics and output characteristics. The Doping of graphene was successfully verified by X-Ray photoelectron spectra (XPS) measurements. The testing results showed that the Dirac point (the value of gate to source voltage at which minimum value of drain to source current is attained) in transfer characteristics of Graphene Field Effect Transistor (GFET) shifted from VGS = 6.42 V to VGS = 40 V after doping. The slope of the output characteristics of GFET for VGS = 0 V increased from 3.56 to 5.44.
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