An Accurate Drain Current Model for Symmetric Dual Gate Tunnel FET Using Effective Tunneling Length

Abstract

Here we propose an accurate drain current model for a Symmetric Dual Gate Tunnel FET (SDG-TFET) using effective tunneling length and generation rate of carrier over tunneling junction area. The surface potential of the model is obtained by solving 2-dimensional Poisson’s equation and further extends to determine the magnitude of initial tunneling length and final tunneling length. The different DC performance indicators like drain current (ID), threshold voltage (Vth), transconductance (gm) and Subthreshold Slope (SS) for the present model are extensively investigated and the results are compared with that of Single Gate Tunnel FET (SGTFET). The practical importance of this model relies on its accuracy and improved electrostatic performance over SG-TFET. The analytical model results are validated using TCAD Sentaurus (Synopsys) device simulator.