M. Andenna, Y. Otani, S. Matthias, C. Corvasce, S. Geissmann, A. Kopta, R. Schnell, Munaf T. A. Rahimo
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引用次数: 10
Abstract
In this paper, we present the next generation of IGBT modules employing the latest Enhanced Trench ET-IGBT and Field Charge Extraction FCE fast diode devices. Such technologies enable high power IGBT modules to be capable of providing higher level of electrical performance in terms of low losses, good controllability, high robustness and soft diode reverse recovery. The first prototype dual modules with the new chip technologies rated at 300A and 3300V were fabricated and tested. The paper will present in detail the ET-IGBT and FCE diode concepts, the full static and dynamic electrical test results and their impact for achieving higher levels of performance in future power electronics applications.
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