M. B. González, J. M. Rafí, O. Beldarrain, M. Zabala, F. Campabadal
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Abstract
In this work, a systematic study of the electrical characteristics of Al2O3 and HfO2 dielectrics based MOS capacitors is presented enabling the analysis of the impact of pre-existing electrically active defects, stress induced degradation and the dielectric breakdown phenomena on the leakage current behavior.
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