Effect of Nd4Ba2Cu2O10 addition on the pinning properties of Nd-Ba-Cu-O crystals

T. Mochida, N. Chikumoto, M. Murakami
{"title":"Effect of Nd4Ba2Cu2O10 addition on the pinning properties of Nd-Ba-Cu-O crystals","authors":"T. Mochida,&nbsp;N. Chikumoto,&nbsp;M. Murakami","doi":"10.1016/S0964-1807(98)00104-5","DOIUrl":null,"url":null,"abstract":"<div><p>We have studied the effects of Nd<sub>4</sub>Ba<sub>2</sub>Cu<sub>2</sub>O<sub>10</sub> (Nd422) on the pinning characteristics of NdBa<sub>2</sub>Cu<sub>3</sub>O<sub>7−<em>δ</em></sub> (Nd123) crystals. Like Y<sub>2</sub>BaCuO<sub>5</sub> particles in the Y–Ba–Cu–O system, the addition of Nd422 could enhance critical current density <em>J</em><sub>c</sub> at lower fields. The peak field (<em>B</em><sub>pk</sub>) and the <em>J</em><sub>c</sub> value at <em>B</em><sub>pk</sub> were almost independent of Nd422 contents although a slight decrease in <em>J</em><sub>c</sub> at <em>B</em><sub>pk</sub> was observed with increasing Nd422 contents. The normalized relaxation rate (<em>S</em>) increased for all the samples when the field exceeded <em>B</em><sub>pk</sub>. The addition of Nd422 was effective in preventing a rapid increase in <em>S</em> above <em>B</em><sub>pk</sub>. The exponent <em>μ</em>, defined in the collective creep model, was deduced by fitting the experimental data and was found to show strong field dependence. We found that <em>μ</em> changes from positive to negative at around <em>B</em><sub>pk</sub><span>, suggesting that the flux creep mechanism is different below and above </span><em>B</em><sub>pk</sub>.</p></div>","PeriodicalId":100110,"journal":{"name":"Applied Superconductivity","volume":"6 2","pages":"Pages 217-224"},"PeriodicalIF":0.0000,"publicationDate":"1998-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S0964-1807(98)00104-5","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Superconductivity","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0964180798001045","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

We have studied the effects of Nd4Ba2Cu2O10 (Nd422) on the pinning characteristics of NdBa2Cu3O7−δ (Nd123) crystals. Like Y2BaCuO5 particles in the Y–Ba–Cu–O system, the addition of Nd422 could enhance critical current density Jc at lower fields. The peak field (Bpk) and the Jc value at Bpk were almost independent of Nd422 contents although a slight decrease in Jc at Bpk was observed with increasing Nd422 contents. The normalized relaxation rate (S) increased for all the samples when the field exceeded Bpk. The addition of Nd422 was effective in preventing a rapid increase in S above Bpk. The exponent μ, defined in the collective creep model, was deduced by fitting the experimental data and was found to show strong field dependence. We found that μ changes from positive to negative at around Bpk, suggesting that the flux creep mechanism is different below and above Bpk.

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
添加Nd4Ba2Cu2O10对Nd-Ba-Cu-O晶体钉扎性能的影响
我们研究了Nd4Ba2Cu2O10 (Nd422)对NdBa2Cu3O7−δ (Nd123)晶体钉扎特性的影响。与Y-Ba-Cu-O体系中的Y2BaCuO5粒子一样,Nd422的加入可以提高低场下的临界电流密度Jc。峰田(Bpk)和Bpk处的Jc值与Nd422含量无关,但随着Nd422含量的增加,Bpk处的Jc值略有下降。当电场超过Bpk时,所有样品的归一化松弛率(S)都增加。添加Nd422能有效防止S在Bpk以上的快速增长。通过对实验数据的拟合,推导出了集体蠕变模型中定义的指数μ,发现其具有较强的场依赖性。我们发现μ在Bpk附近由正变为负,说明在Bpk以下和Bpk以上的通量蠕变机制不同。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Raw data and analysis pipeline for producing figures in F.W. Carter, et. al., 2016 Review and evaluation of methods for application of epitaxial buffer and superconductor layers1 10 K NbN ADC for IR sensor applications Optically-induced effects in Y–ba–cu–O Josephson junctions Cell-library design methodology for integrated RSFQ-logic
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1