Kirkendall空隙改进薄小无铅封装

L. Y. Lim, Yao-Huang Huang
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引用次数: 0

摘要

铜柱bump倒装芯片在解决方案中提供了突破性的封装尺寸缩小,更低的封装成本和更好的产品性能。然而,在制造可靠的铜柱凸起方面存在挑战。正确选择电镀材料和工艺是满足设计目标、质量和可靠性的关键。在一个薄而小的无铅封装上的铜柱凸块倒装芯片的鉴定运行过程中,在150℃的高温储存1000小时和从- 55℃到150℃的1000次温度循环后,在铜和SnAg(锡银)层中发现了过多的Kirkendall空洞生长。使用8D、鱼骨图和5 why等方法来调查这种异常地层的根本原因,并得出解决问题的可靠解决方案。研究包括对2种不同电镀工艺的评价和对现有铜柱堆矿进行改进后的电镀工艺参数优化。评估将通过175℃高温下168小时、x射线和x射线切片分析进一步验证。
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Kirkendall Voids Improvement in Thin Small No Lead Package
Copper Pillar bump Flipchip in the key solution in providing the breakthrough in package size reduction, lower cost package and better product performance. However there are challenges in creating a reliable copper pillar bump. Proper choice of electroplating materials and process are critical in meeting the design goals, quality and reliability. During a qualification run on a copper pillar bump flipchip on a thin small no lead package, excessive Kirkendall voids growth was found in the copper and SnAg (Tin-sliver) layer after 1000 hours of High Temperature storage at 150 deg C and 1000 cycles temperature cycle from −55°C to 150°. Methodologies like 8D, fishbone diagram and 5 why are used to investigate the root cause of this abnormality formation and deriving a robust solution to resolve the issue. The Investigation include evaluation of 2 different plating chemical and the plating parameter optimization with some improvement on the current copper pillar bump stack up. The evaluation will further validate by HTSL 175 deg C for 168 hours and X-ray and X-sectional analysis of packages.
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