{"title":"MBE生长InGaAsP/InAlAsP多量子阱在1 μm波长区域的光学特性","authors":"T. Yamamoto, M. Kayama, Y. Kawamura","doi":"10.1109/ICIPRM.2010.5516349","DOIUrl":null,"url":null,"abstract":"InGaAsP/InAlAsP multiple quantum wells (MQWs) for 1 μm wavelength region optical modulators were proposed and were grown by molecular beam epitaxy (MBE). Optical properties, such as photoluminescence and optical absorption of InAlAsP layers, InGaAs/InAlAsP MQW layers and InGaAsP/InAlAsP MQW layers were studied in detail. A clear absorption edge was observed at about 1.06 μm for InGaAsP/InAlAsP MQW layers.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"22 13","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optical characterization of InGaAsP/InAlAsP multiple quantum wells grown by MBE for 1 μm wavelength region\",\"authors\":\"T. Yamamoto, M. Kayama, Y. Kawamura\",\"doi\":\"10.1109/ICIPRM.2010.5516349\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InGaAsP/InAlAsP multiple quantum wells (MQWs) for 1 μm wavelength region optical modulators were proposed and were grown by molecular beam epitaxy (MBE). Optical properties, such as photoluminescence and optical absorption of InAlAsP layers, InGaAs/InAlAsP MQW layers and InGaAsP/InAlAsP MQW layers were studied in detail. A clear absorption edge was observed at about 1.06 μm for InGaAsP/InAlAsP MQW layers.\",\"PeriodicalId\":197102,\"journal\":{\"name\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"22 13\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-07-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2010.5516349\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2010.5516349","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optical characterization of InGaAsP/InAlAsP multiple quantum wells grown by MBE for 1 μm wavelength region
InGaAsP/InAlAsP multiple quantum wells (MQWs) for 1 μm wavelength region optical modulators were proposed and were grown by molecular beam epitaxy (MBE). Optical properties, such as photoluminescence and optical absorption of InAlAsP layers, InGaAs/InAlAsP MQW layers and InGaAsP/InAlAsP MQW layers were studied in detail. A clear absorption edge was observed at about 1.06 μm for InGaAsP/InAlAsP MQW layers.
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