V. Jain, J. Rode, H. Chiang, A. Baraskar, E. Lobisser, B. Thibeault, M. Rodwell, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J. Fastenau, W.K. Liu
{"title":"1.0 THz fmax InP dhbt在耐火发射极和自对准基极工艺,以减少基极接入电阻","authors":"V. Jain, J. Rode, H. Chiang, A. Baraskar, E. Lobisser, B. Thibeault, M. Rodwell, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J. Fastenau, W.K. Liu","doi":"10.1109/DRC.2011.5994528","DOIUrl":null,"url":null,"abstract":"We report 220 nm InP double heterojunction bipolar transistors (DHBTs) demonstrating f<inf>τ</inf> = 480 GHz and f<inf>max</inf> = 1.0 THz. Improvements in the emitter and base processes have made it possible to achieve a 1.0 THz f<inf>max</inf> even at 220 nm wide emitter-base junction with a 1.1 µm wide base-collector mesa. A vertical emitter metal etch profile, wet-etched thin InP emitter semiconductor with less than 10 nm undercut and self-aligned base contact deposition reduces the emitter semiconductor-base metal gap (W<inf>gap</inf>) to ∼ 10 nm, thereby significantly reducing the gap resistance term (R<inf>gap</inf>) in the total base access resistance (R<inf>bb</inf>), enabling a high f<inf>max</inf> device. Reduction in the total collector base capacitance (C<inf>cb</inf>) through undercut in the base mesa below base post further improved f<inf>max</inf>. These devices employ a Mo/W/TiW refractory emitter metal contact which allows biasing the transistors at high emitter current densities (J<inf>e</inf>) without problems of electromigration or contact diffusion under electrical stress [1].","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":"{\"title\":\"1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance\",\"authors\":\"V. Jain, J. Rode, H. Chiang, A. Baraskar, E. Lobisser, B. Thibeault, M. Rodwell, M. Urteaga, D. Loubychev, A. Snyder, Y. Wu, J. Fastenau, W.K. Liu\",\"doi\":\"10.1109/DRC.2011.5994528\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report 220 nm InP double heterojunction bipolar transistors (DHBTs) demonstrating f<inf>τ</inf> = 480 GHz and f<inf>max</inf> = 1.0 THz. Improvements in the emitter and base processes have made it possible to achieve a 1.0 THz f<inf>max</inf> even at 220 nm wide emitter-base junction with a 1.1 µm wide base-collector mesa. A vertical emitter metal etch profile, wet-etched thin InP emitter semiconductor with less than 10 nm undercut and self-aligned base contact deposition reduces the emitter semiconductor-base metal gap (W<inf>gap</inf>) to ∼ 10 nm, thereby significantly reducing the gap resistance term (R<inf>gap</inf>) in the total base access resistance (R<inf>bb</inf>), enabling a high f<inf>max</inf> device. Reduction in the total collector base capacitance (C<inf>cb</inf>) through undercut in the base mesa below base post further improved f<inf>max</inf>. These devices employ a Mo/W/TiW refractory emitter metal contact which allows biasing the transistors at high emitter current densities (J<inf>e</inf>) without problems of electromigration or contact diffusion under electrical stress [1].\",\"PeriodicalId\":107059,\"journal\":{\"name\":\"69th Device Research Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"69th Device Research Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.2011.5994528\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994528","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
1.0 THz fmax InP DHBTs in a refractory emitter and self-aligned base process for reduced base access resistance
We report 220 nm InP double heterojunction bipolar transistors (DHBTs) demonstrating fτ = 480 GHz and fmax = 1.0 THz. Improvements in the emitter and base processes have made it possible to achieve a 1.0 THz fmax even at 220 nm wide emitter-base junction with a 1.1 µm wide base-collector mesa. A vertical emitter metal etch profile, wet-etched thin InP emitter semiconductor with less than 10 nm undercut and self-aligned base contact deposition reduces the emitter semiconductor-base metal gap (Wgap) to ∼ 10 nm, thereby significantly reducing the gap resistance term (Rgap) in the total base access resistance (Rbb), enabling a high fmax device. Reduction in the total collector base capacitance (Ccb) through undercut in the base mesa below base post further improved fmax. These devices employ a Mo/W/TiW refractory emitter metal contact which allows biasing the transistors at high emitter current densities (Je) without problems of electromigration or contact diffusion under electrical stress [1].