F. Oehler, J. Sauerer, R. Hagelauer, D. Seitzer, U. Nowotny, B. Raynor, J. Schneider
{"title":"采用0.3 /spl mu/m AlGaAs-HEMT技术的3.6 gb /s 5位模数转换器","authors":"F. Oehler, J. Sauerer, R. Hagelauer, D. Seitzer, U. Nowotny, B. Raynor, J. Schneider","doi":"10.1109/GAAS.1993.394478","DOIUrl":null,"url":null,"abstract":"A 0.3 /spl mu/m AlGaAs-HEMT technology was used to develop a high speed analog to digital converter (ADC). The 5-b converter based on a parallel architecture, operates up to a 3.6 GHz sampling rate. Excellent dynamic performance was achieved by an optimized comparator design and careful layout of the signal and clock lines. Each comparator is preceeded by a preamplifier to enhance its sensitivity and to minimize clock kickback. Using source follower buffers at the input, a very linear input capacitance was achieved. Thus the ADC's overall input capacitance is voltage independent.<<ETX>>","PeriodicalId":347339,"journal":{"name":"15th Annual GaAs IC Symposium","volume":"42 1-2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"A 3.6 gigasample/s 5 bit analog to digital converter using 0.3 /spl mu/m AlGaAs-HEMT technology\",\"authors\":\"F. Oehler, J. Sauerer, R. Hagelauer, D. Seitzer, U. Nowotny, B. Raynor, J. Schneider\",\"doi\":\"10.1109/GAAS.1993.394478\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 0.3 /spl mu/m AlGaAs-HEMT technology was used to develop a high speed analog to digital converter (ADC). The 5-b converter based on a parallel architecture, operates up to a 3.6 GHz sampling rate. Excellent dynamic performance was achieved by an optimized comparator design and careful layout of the signal and clock lines. Each comparator is preceeded by a preamplifier to enhance its sensitivity and to minimize clock kickback. Using source follower buffers at the input, a very linear input capacitance was achieved. Thus the ADC's overall input capacitance is voltage independent.<<ETX>>\",\"PeriodicalId\":347339,\"journal\":{\"name\":\"15th Annual GaAs IC Symposium\",\"volume\":\"42 1-2\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"15th Annual GaAs IC Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1993.394478\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"15th Annual GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1993.394478","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 3.6 gigasample/s 5 bit analog to digital converter using 0.3 /spl mu/m AlGaAs-HEMT technology
A 0.3 /spl mu/m AlGaAs-HEMT technology was used to develop a high speed analog to digital converter (ADC). The 5-b converter based on a parallel architecture, operates up to a 3.6 GHz sampling rate. Excellent dynamic performance was achieved by an optimized comparator design and careful layout of the signal and clock lines. Each comparator is preceeded by a preamplifier to enhance its sensitivity and to minimize clock kickback. Using source follower buffers at the input, a very linear input capacitance was achieved. Thus the ADC's overall input capacitance is voltage independent.<>