{"title":"介质隔离LDMOSFET的高温性能:表征、仿真与分析","authors":"R. Sunkavalli, B. J. Baliga, Y. Huang","doi":"10.1109/ISPSD.1994.583782","DOIUrl":null,"url":null,"abstract":"The temperature dependence of the static parameters of the 550 V RESURF DI LDMOSFET is reported. High temperature measurements were carried out from 25/spl deg/C-200/spl deg/C at intervals of 25/spl deg/C. The parameters measured include the on-resistance, threshold voltage, transconductance, effect of substrate bias, breakdown voltage and leakage current. Accurate analytic models, supported by extensive two-dimensional numerical simulations, have been developed to explain and predict device performance.","PeriodicalId":405897,"journal":{"name":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1994-05-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"High temperature performance of dielectrically isolated LDMOSFET: characterization, simulation and analysis\",\"authors\":\"R. Sunkavalli, B. J. Baliga, Y. Huang\",\"doi\":\"10.1109/ISPSD.1994.583782\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The temperature dependence of the static parameters of the 550 V RESURF DI LDMOSFET is reported. High temperature measurements were carried out from 25/spl deg/C-200/spl deg/C at intervals of 25/spl deg/C. The parameters measured include the on-resistance, threshold voltage, transconductance, effect of substrate bias, breakdown voltage and leakage current. Accurate analytic models, supported by extensive two-dimensional numerical simulations, have been developed to explain and predict device performance.\",\"PeriodicalId\":405897,\"journal\":{\"name\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-05-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.1994.583782\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.1994.583782","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High temperature performance of dielectrically isolated LDMOSFET: characterization, simulation and analysis
The temperature dependence of the static parameters of the 550 V RESURF DI LDMOSFET is reported. High temperature measurements were carried out from 25/spl deg/C-200/spl deg/C at intervals of 25/spl deg/C. The parameters measured include the on-resistance, threshold voltage, transconductance, effect of substrate bias, breakdown voltage and leakage current. Accurate analytic models, supported by extensive two-dimensional numerical simulations, have been developed to explain and predict device performance.
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