E. Amat, A. Asenov, R. Canal, B. Cheng, J.-Ll. Cruz, Z. Jaksic, M. Corbalan, A. Rubio, P. Zuber
{"title":"存储器中的FinFET技术分析","authors":"E. Amat, A. Asenov, R. Canal, B. Cheng, J.-Ll. Cruz, Z. Jaksic, M. Corbalan, A. Rubio, P. Zuber","doi":"10.1109/IOLTS.2012.6313866","DOIUrl":null,"url":null,"abstract":"Summary form only given. Due to increased leakage currents and variability, classical bulk technology is reaching its scaling limits and some alternatives must be found. FinFETs are one of those alternatives. Through their 3D structure, they achieve better channel control which is the key to scalability. However, some sources of variability still remain. The impact of this technology shift on SRAM and DRAM memories is analyzed in this work.","PeriodicalId":246222,"journal":{"name":"2012 IEEE 18th International On-Line Testing Symposium (IOLTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of FinFET technology on memories\",\"authors\":\"E. Amat, A. Asenov, R. Canal, B. Cheng, J.-Ll. Cruz, Z. Jaksic, M. Corbalan, A. Rubio, P. Zuber\",\"doi\":\"10.1109/IOLTS.2012.6313866\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. Due to increased leakage currents and variability, classical bulk technology is reaching its scaling limits and some alternatives must be found. FinFETs are one of those alternatives. Through their 3D structure, they achieve better channel control which is the key to scalability. However, some sources of variability still remain. The impact of this technology shift on SRAM and DRAM memories is analyzed in this work.\",\"PeriodicalId\":246222,\"journal\":{\"name\":\"2012 IEEE 18th International On-Line Testing Symposium (IOLTS)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE 18th International On-Line Testing Symposium (IOLTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IOLTS.2012.6313866\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE 18th International On-Line Testing Symposium (IOLTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IOLTS.2012.6313866","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Summary form only given. Due to increased leakage currents and variability, classical bulk technology is reaching its scaling limits and some alternatives must be found. FinFETs are one of those alternatives. Through their 3D structure, they achieve better channel control which is the key to scalability. However, some sources of variability still remain. The impact of this technology shift on SRAM and DRAM memories is analyzed in this work.
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