64°-YX LiNbO3溅射AlN薄膜的晶体结构和表面形貌

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics Pub Date : 2007-05-27 DOI:10.1109/ISAF.2007.4393196

F. Chang, Sean Wu, Maw-Shung Lee, Jianwei Yu, Chiaokai Chang, Chengxiong Huang

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引用次数: 1

摘要

采用射频磁控溅射技术在64度yx LiNbO3衬底上成功制备了高度(002)取向的氮化铝(AlN)薄膜。采用掠射入射角x射线衍射(XRD)测定了膜的晶体结构，并用扫描电镜(SEM)研究了膜的表面微观结构。利用能量色散x射线能谱(EDS)测定了膜的原子组成比(Al/N)。结果表明，在温度为200℃、温度为5 m的温度下制备了最佳的(002)取向AlN薄膜。原子组成比(Al/N)为0.96(接近1)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Crystalline Structure and Surface Morphology of the AlN films sputtered on 64°-YX LiNbO3

Highly (002) oriented aluminum nitride (AlN) films were successfully prepared on a 64deg-YX LiNbO3 substrate by r.f. magnetron sputtering. The crystalline structure of the films was determined by grazing incident angle X-ray diffraction (XRD) and the surface microstructure of films was investigated by Scanning electron microscope (SEM). The atom composition ratio (Al/N) of the films was also determined by Energy Dispersive X-ray Spectroscopy (EDS). The results showed the optimal (002) oriented AlN films were prepared at 200 C and 5 m Torr. The atom composition ratio (Al/N) was 0.96 (near 1).

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2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics

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