Hydrophilic bonding of SiC substrate dipped in hydrofluoric acid with Ga2O3 film through atomically thin intermediate layer

SiC and Ga2O3 surfaces were directly bonded by hydrophilic bonding with an ~0.7-nm-thick intermediate layer. The SiC surface was - OH-terminated with hydrofluoric acid, instead of conventional oxidizing treatment, to minimize the formation of the intermediate layer. This would contribute to efficient heat disspation across bonding interface.