高灵敏度蓝宝石上硅磁二极管

G. Kamarinos, P. Viktorovitch, S. Cristoloveanu, J. Borel, R. Staderini
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引用次数: 2

摘要

蓝宝石上硅薄膜的复合参数(体寿命和表面复合速度)的值允许实现磁致二极体,既非常敏感,又与超大规模集成电路技术兼容。我们提出的s.o.s.磁二极管的平均灵敏度约为150 mA/Tesla(霍尔效应灵敏度的10倍)。此外,很容易检测到极低的磁场(B = 10-8T = 10γ)。
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Silicon on sapphire magnetodiodes of high sensitiveness
The values of recombination parameters (bulk lifetime and surface recombination velocities) of films of Silicon On Sapphire allow the realization of magnetodiodes, which are both very sensitive and compatible with the VLSI Technology. The S. O. S. magnetodiodes we present exhibit an average sensitiveness on the order of some 150 mA/Tesla (10 times the sensitiveness of Hall effect). Besides very low magnetic fields (B = 10-8T = 10γ) are easily detectable.
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