{"title":"主题演讲1:GaN是改变游戏规则的设备吗?","authors":"F. Lee","doi":"10.1109/EPEPEMC.2014.6980498","DOIUrl":null,"url":null,"abstract":"Gallium Nitride devices are gathering momentum, with a number of recent market introductions for such applications as point of load converters (POL), off-line switching power supplies, battery chargers and motor drives. GaN devices have a much lower gate charge and lower output capacitance and, therefore, are capable of operating at a switching frequency 10 times of that of the silicon MOSFET. This might significantly impact the power density, form factor and even the current design and manufacturing practice.","PeriodicalId":325670,"journal":{"name":"2014 16th International Power Electronics and Motion Control Conference and Exposition","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Keynote 1: Is GaN a Game Changing Device ?\",\"authors\":\"F. Lee\",\"doi\":\"10.1109/EPEPEMC.2014.6980498\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gallium Nitride devices are gathering momentum, with a number of recent market introductions for such applications as point of load converters (POL), off-line switching power supplies, battery chargers and motor drives. GaN devices have a much lower gate charge and lower output capacitance and, therefore, are capable of operating at a switching frequency 10 times of that of the silicon MOSFET. This might significantly impact the power density, form factor and even the current design and manufacturing practice.\",\"PeriodicalId\":325670,\"journal\":{\"name\":\"2014 16th International Power Electronics and Motion Control Conference and Exposition\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 16th International Power Electronics and Motion Control Conference and Exposition\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EPEPEMC.2014.6980498\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 16th International Power Electronics and Motion Control Conference and Exposition","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EPEPEMC.2014.6980498","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Gallium Nitride devices are gathering momentum, with a number of recent market introductions for such applications as point of load converters (POL), off-line switching power supplies, battery chargers and motor drives. GaN devices have a much lower gate charge and lower output capacitance and, therefore, are capable of operating at a switching frequency 10 times of that of the silicon MOSFET. This might significantly impact the power density, form factor and even the current design and manufacturing practice.